Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective

As 2D materials (2DMs) gain the research limelight as a technological option for obtaining on-demand printed low-cost integrated circuits with reduced environmental impact, theoretical methods able to provide necessary fabrication guidelines acquire fundamental importance. Here, multiscale modeling technique is exploited study electronic transport in devices consisting of 2DM network flakes. The approach implements Monte Carlo scheme generate flake distribution. By means ab initio density functional theory calculations together non equilibrium Green's functions formalism, detailed physical insights on flake-to-flake mechanisms are provided. This later feeds 3D drift-diffusion and Poisson solution compute self-consistently electrostatics device. method applied MoS2 graphene-based dielectrically gated FETs, highlighting impact structure variability mobility sheet resistance. prediction capability proposed validated against electrical measurements in-house graphene conductive lines function film thickness, demonstrating its strong potential guide future experimental activity field.